dmn5l06dwk document number: ds30930 rev. 4 - 2 1 of 4 www.diodes.com november 2007 ? diodes incorporated dmn5l06dw k new product dual n-channel enhancement mode field effect transistor features ? dual n-channel mosfet ? low on-resistance (1.0v max) ? very low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? lead free by design/rohs compliant (note 2) ? esd protected up to 2kv ? "green" device (note 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-363 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.006 grams (approximate) sot-363 s 1 d 1 d 2 s 2 g 1 g 2 esd protected up to 2kv top view internal schematic top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 50 v gate-source voltage v gss 20 v drain current (note 1) continuous pulsed (note 3) i d 305 800 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit total power dissipation (note 1) p d 250 mw thermal resistance, junction to ambient r ja 500 c/w operating and storage temperature range t j , t stg -65 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 50 ? ? v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c i dss ? ? 60 na v ds = 50v, v gs = 0v gate-body leakage i gss ? ? 1 500 50 a na na v gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 0.49 ? 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? ? ? ? ? 3.0 2.5 2.0 v gs = 1.8v, i d = 50ma v gs = 2.5v, i d = 50ma v gs = 5.0v, i d = 50ma on-state drain current i d(on) 0.5 1.4 ? a v gs = 10v, v ds = 7.5v forward transconductance |y fs | 200 ? ? ms v ds =10v, i d = 0.2a source-drain diode forward voltage v sd 0.5 ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? ? 50 pf output capacitance c oss ? ? 25 pf reverse transfer capacitance c rss ? ? 5.0 pf v ds = 25v, v gs = 0v f = 1.0mhz notes: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.?s ?green? policy can be found on ou r website at http://www.diodes .com/products/lead_free/index.php. 5. short duration pulse test used to minimize self-heating effect.
dmn5l06dw k v , drain-source voltage (v) fig. 1 typical output characteristics ds v , gate-source voltage (v) fig. 2 typical transfer characteristics gs t , channel temperature (c) fig. 3 gate threshold voltage vs. channel temperature ch 0 -50 -25 0 25 50 75 100 125 150 0 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 10 r , static drain-source on-resistance ( ) ds(on) 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 r , static drain-source on-resistance ( ) ds(on) v gate source voltage (v) fig. 6 static drain-source on-resistance vs. gate-source voltage gs, r , static drain-source on-resistance ( ) ds(on) new product dmn5l06dwk document number: ds30930 rev. 4 - 2 2 of 4 www.diodes.com november 2007 ? diodes incorporated
dmn5l06dw k t , ambient temperature ( c) fig. 7 a static drain-source on-state resistance vs. ambient temperature r , static drain-source on-resistance ( ) ds(on) i , reverse drain current (a) dr i , reverse drain current (a) dr 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current | y |, f o r wa r d t r ansfe r admi t t an c e (s) fs -50 0 50 100 150 250 200 150 50 100 0 t , ambient temperature ( c) fig. 11 derating curve - total a p , p o we r d issi p a t i o n (mw) d new product dmn5l06dwk document number: ds30930 rev. 4 - 2 3 of 4 www.diodes.com november 2007 ? diodes incorporated
dmn5l06dw k ordering information (note 6) part number case packaging DMN5L06DWK-7 sot-363 3000/tape & reel n otes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf . marking information new product dab = marking code ym = date code markin y = year ex: t = 2006 g = month ex: 9 = september m date c y ode ke year dmn5l06dwk document number: ds30930 rev. 4 - 2 4 of 4 www.diodes.com november 2007 ? diodes incorporated 2006 2007 2008 2009 2010 2011 2012 code t u v w x y z j f mar a m jun j a sep o n dec month an eb pr ay ul ug ct ov code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use an d will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized f or use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. a m j l d b c h k f s 3 ot-36 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 n om inal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm x z y c e e g dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65
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